Schneider Electric’s White Paper 219 is one of the first comprehensive engineering analyzes of arc flash hazards in emerging 800 VDC AI data center architectures. The authors show that, unlike DC systems which are just an extension of traditional AC installations, converter-fed 800 VDC networks require an architecture-aware approach, where the fault characteristics are dominated by transient behavior, converter control and energy storage. A major strength of the paper is its realistic system modeling. The traditional NFPA 70E methods are...

Power Integrations has announced an expansion of its PowiGaN™ gallium-nitride (GaN) technology platform to a 2200 V voltage rating, establishing what the company identifies as the highest voltage capability among commercially available GaN solutions. The development targets high-voltage applications across data center, electric vehicle, renewable energy, and high-voltage direct current (HVDC) infrastructure segments. The advancement addresses a growing industry requirement for higher-voltage bus architectures as power systems seek improved density without sacrificing efficiency. While GaN-based power switches have increasingly displaced...

Schneider Electric has published a first-of-its-kind technical analysis examining arc flash risk within 800 VDC power architectures, offering data-driven guidance for facilities transitioning to this emerging distribution standard for AI-oriented data centers. The study, developed in alignment with design patterns used by major hyperscale operators, evaluates two representative 800 VDC configurations under varying conditions. Results indicate that arc flash severity is primarily a function of system architecture, capacitor placement, and fault-clearing timing rather than an inherent characteristic of DC distribution...

I was in Shanghai on June 30 for Infineon's 2026 Media Day, held at the company's Greater China headquarters in Zhangjiang under the theme “From Innovation to Value.” Infineon’s Greater China leadership — including David Poon, global senior vice president and Greater China president, and Cao Yanfei, senior vice president and head of the automotive business in Greater China — walked the room through the company’s overall strategy and localization plan, then through the automotive, industrial and infrastructure, and...

Traditional space LDOs rely on silicon MOSFETs that suffer from radiation degradation. To solve this, Tony Marini from EPC Space highlights a revolutionary alternative using enhancement-mode Gallium Nitride (eGaN) HEMTs. Their unique material physics inherently resists Total Ionizing Dose (TID) effects without performance loss, ensuring exceptional parameter stability in harsh orbital environments. GaN Physics and Radiation Mitigation Mechanisms  Unlike silicon MOSFETs, which rely on physical oxide interfaces that trap positive charges when exposed to low-dose ionizing radiation (<30 kRad), eGaN HEMTs...